摘要
采用常规低压集成电路工艺实现了耐压达１０００Ｖ的高压横向ＭＯＳＦＥＴ，详细介绍了该高压横向ＭＯＳＦＥＴ的设计方法、器件结构、工艺技术及测试结果。文中从实验和分析的角度上首次探讨了覆盖在漂移区上面的金属栅长度对该高压横向ＭＯＳＦＴ击穿电压的影响。
The 000V blocking capability of the lateral tigh-voltape MOSFET is achieved usingconventional low-voltage IC technology. The design, implementation and testing results of thishigh-voltage LDMOSFET are described . The effecd of the length of gate metal extension over the drift re-gion on the breakdown voltagr of the RESURF LDMOSFET is investigated using experimental and ana-lytical methods for the first time.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1994年第4期441-448,共8页
Journal of University of Electronic Science and Technology of China
关键词
场效应晶体管
工艺
MOS器件
high voltage
lateral
MOSFET
low voltage
integrated circuit technology
breaddown voltage
RESURF tehcnique
