摘要
本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应;指出应全面考虑库仑发射和非库仑发射对载流于产生率的影响;给出了相应的产生率计算公式。对计算机计算结果的分析表明,以往的只考虑库仑发射的模型过于简单,本文理论可以较满意地解释有关的实验结果。
The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied. This paper points out that both Cou-lombic emission and non-Coulombic emission must be considered into the carrier generation rates of deep level centers. On this basis, a formula of generation rate has been given. The analysis of the computing results shows tkat previous model, in which only Coulombic emission was considered, is rather simple, and tke tkeory proposed in this paper can more satisfactorily explain the experimental results.
基金
国家自然科学基金
