摘要
本文对双垒二极管中的电子隧穿作了数值分析。引入隧穿矩阵,建立了透射系数的公式;利用该公式,计算了隧道电流。此外,本文还分析了势垒结构对伏-安特性的影响。
The main purpose of this paper is to give a numerical analysis for the electrontunneling in the Double-Barrier diode.A tunneling matrix is introduced,and the formula of thetransmission coefficient is established.With the formula the tunnel current is calculated.Furthermore the effects of the barrier structure on the current-voltage characteristics areanalysed。
出处
《电子器件》
CAS
1994年第3期12-15,共4页
Chinese Journal of Electron Devices
关键词
双垒
共振隧穿
透射系数
伏-安特性
二极管
Double-Barrier,resonant tunneling,transmission coefficient,current-voltagecharacteristic