硅基材料高效发光──多孔硅光致发光研究

Efficient Luminescence of Si substrate Material A Study on Photo Lununescence of Porous Sillcon

本文介绍了采用阳极氧化腐蚀工艺在单晶硅上制作多孔硅（ＰＳ）薄层，对ＰＳ薄层进行了微结构的分析为毫微结构量子线组成的复杂网络，其截面尺寸为纳米范围而纵向尺寸在微米量级。对ＰＳ样品光致发光谱的测定发现随阳极氧化电流密度和腐蚀时间的增加谱峰发生“兰移”并用ＰＳ的量子限制效应解释了上述实验现象。

In this paper,a kind of technology for producing porous silicon(ps) thin film onmonocrystalline silicon substrate, using the electrochemical anodic oxidation (Ao) method, isintroduced.The micro- structure of ps thin Leyer is analyzed,diseover thet ps micro-stnlctureconsists of Quantum line network,its cross section is nm size, but its depth is um size.Thephotoluminescence(PL)spectra measured by us show that their maxinium peaks will applwar.blueshife with increasing AO electric current and AO time,and above experimental phenomena areexplained by Quantum confinement effect.