MIM隧道发光结的负阻现象

The Negative Resistance Phenomenon in MIM Tunneling Junction

本文介绍了薄膜隧道发光结的基本结构、发光机理，阐述了其Ｉ－Ｖ特性中的负阻现象。简单介绍了ＭＩＭ结构负阻的几种解释，根据热像仪照片和低温测试结果分析，再结合Ｄｅａｒｍａｌｅｙ导电模型，我们提出了ＭＩＭ负阻的物理模型，理论与实验符合较好，最后分析了负阻现象的应用前景。

Our peper introduces a new kind of basic structure of light-emission junction and itsphotoemission mechanics,It describes also a Negative Resistance Phenomenon in I-V Cutves,According to our eperunental results and Dcarnaley's MIM conducting mode,we do our efforts toput forth the theoretical mode of this phenomenon, and explain all experimental results very well.In the end,we devise a new sort of switeh with this MIM junction.