摘要
中子辐照直拉硅中缺陷的电镜观察李养贤，鞠玉林（河北工学院材料研究中心，天津３００１３０）随着大规模、超大规模集成电路的发展，对半导体硅材料提出了更严格的要求。因为硅片内的缺陷会严重影响器件的电参数和成品率，也是导致器件失效的主要原因。制备完美晶体、消...
出处
《电子显微学报》
CAS
CSCD
1994年第6期504-504,共1页
Journal of Chinese Electron Microscopy Society
基金
天津市21世纪青年自然科学基金
同被引文献43
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8张国云,刘衍晟,简利茹,姬燕.现代新型扫描电镜灯丝的维护[J].分析仪器,2011(3):90-92. 被引量：8
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