摘要
本文研究了GaAsMESFET对应力的敏感特性,分析了敏感原理。对GaAsMESFET用作力学量传感器的可能性进行了讨论。
Properties of sensitivity of GaAs MESFET to stress were investigated.The sensitive principle was analysed.The possibility of fabricating force sensor using GaAs MESFET was discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1994年第2期89-91,共3页
Acta Electronica Sinica