薄膜SOI／CMOS的SPICE电路模拟

TFSOI/CMOS ICs Simulation Using SPICE

鉴于ＳＰＩＣＥ是目前世界上广泛采用的通用电路模拟程序，且具有可扩展模型的灵活性，我们通过修改ＳＰＩＣＥ源程序把新器件模型──ＳＯＩＭＯＳＦＥＴ模型移植入ＳＰＩＣＥ中，通过我们的模拟工作，证实了我们模型的正确性和电路实用性，分析了器件参数对ＳＯＩ／ＣＭＯＳ电路速度的影响，这些结论可以很好地指导电路设计和工艺实践．

A charge-based model for dc and transient circuit simulation has been implemented in SPICE,thereby enabling proper simulation and CAD of SOI/CMOS integrated circuits to be realized. The utility and computing efficiency of the SOIMOSFET model implementation are demonstrated by simulating several representative SOI/CMOS circuits. It has been shown that the shorter channel-length and the thinner Si-film thickness,the faster SOI/CMOS circuit speed,which can compensate low speed caused by decreased power voltage.