金属氧化物气敏半导体表面受感性能的研究

An Investigation of Surface Receptor Property of Gas Sensing Metal Oxide Semiconductors

本文提出了用化学反应动力学理论研究半导体统计分布的方法，并用此方法对在气敏材料表面可能产生吸附氧离子Ｏ２－、Ｏ－的几种历程进行了研究，导出了浓度比［Ｏ２－］／［Ｏ－］的公式。然后根据［Ｏ２－］／［Ｏ－］随温度的升高而下降的事实，通过对吸附氧离子麦德隆（Ｍａｄｅｌｕｎｇ）势的计算，得出了在完整离子晶体表面上不可能产生氧离子Ｏ－的结论，并讨论了可能产生离子Ｏ－的途径。

This paper first suggested a method,which has used the kinetic theory of chemical reation for investigation of semiconductor statistics (distributions) then,a several channels ,in which oxygen negative ion O_2￣-,O￣- can be produced on the surface of gas sensing materials are analysed by the same method,and the formula of the concentrationratio [O_2￣-]/[O￣-] decreases with the temperature increases and estimating of ionsorbed madelung potential ,a conclusion is made ,which it is impossible for ion O￣- to be produced on the surface of the perfect ionic crystals. Furthermore ,the channel which possiblly produces O￣- on the surface is described.