MOSFET低温热载流子效应

Low Temperature Hot Carrier Effects in MOSFET’s

与常温下相比，低温工作ＭＯＳ器件具有许多优点，但低温热载流子引起的器件蜕变却明显增强。本文简要研究了这种效应，包括低温热载流子的行为和界面态的产生及其对器件特性蜕变的影响，最后，从器件结构和工作条件等方面提出了抑制低温热载流子效应的设计考虑。

Low-temperature operation of MOS devices have many advantages as compared to room-temperatutre operation. However , hot-carrier-induced degradation of MOS devices is enhanced at lowtemporatures. The effects, including hot carrier behavior, interface state generation and the enhanceddegradation mechanisms at low temperatures are studied briefly. Finally, based on the devicestructures and operaton conditions, design considerations are proposed to supress low-temperature hot-carrier effects.