硅赝异质结双极晶体管的电学参数性能分析

The Performance Analysis of Electrical Parameters for LowTemperature Pseudo Heterojunction Bipolar Transistors

具有重掺杂基区和中等掺杂发射区的硅赝异质结双极晶体管（ＰＨＢＴ），其能带结构类似于真实异质结双极晶体管（ＨＢＴ）的能带结构，本文研究了硅赝异质结双极晶体管的电流增益，截止频率和基区电阻等电学参数性能及其与温度的关系，并指出了硅赝异质结双极晶体管在低温下应用的潜力。

The peudo heterojunction bipolar transistor(PHBT) is a homojunction bipolar transistorhaving a moderately doped emitter and a heavily doped base, providing a bandgap profile similar toactual heterojunction bipolar transistors (HBT). In this paper, the characteritics and its temperaturedependence of current gain, cutoff frequency and be sheet resistance are investigated theoretically.The potential operation of PHBT at low temperature is disscuesed.