半导体材料分析

Analysis of Semiconductor Materials

本文是《分析试验室》１９８８年定期评述“半导体材料分析”一文的延续。它评述了１９８８年７月至１９９３年１２月国内关于各种半导体材料及涉及半导体工艺中材料的痕量元素分析的进展。内容包括痕量元素分析技术、国家标准及专业标准方法、原子发射光谱法、原子吸收光谱法、电化学分析法、分光光度法、质谱法、气体分析等。共引用文献８５篇。

This is the second review in Fenxi Shiyanshi onanalysis of semiconductor materials,which is basedon 85 articles published in China during the period of1988 to Dec.1993.It reviews the development in thisfield,including spectrophotometry,atomic emissionspectrometry,atomic absorption spectrometry,elec-trochemical analysis,mass spectrometry,trace ele-ment analysis and other analytical techniques,with 85references cited.