ClInPc－（TPD－PVK）光电导体性能的研究

ELECTROPHOTOGRAPHIC CHARACTERISTICS OF THE PHOTORECEPTOR DEViCE CONSISTING OF ClInPc/(PVK-TPD)

本文以氯化酞菁铟（ＣｌＩｎＰｃ）为载流子发生层（ＣＧＬ），四苯基联苯胺（ＴＰＤ）与聚乙烯咔唑（ＰＶＫ）复合为载流子传输层（ＣＴＬ），形成双层结构的功能分离型有机光电导体（Ｐ／Ｒ），研究了它的静电感光性能．结果表明，ＣｌＩｎＰｃ／ＰＭＭＡ（３０％）与ＴＰＤ／ＰＶＫ（１∶１）两者匹配时的Ｐ／Ｒ具有良好的光电导性能，其电荷接受能力Ｖ＿（ｍａｘ）≈８００Ｖ，光电导率△Ｖ＿ｔ（１ｓ）＞７０％，暗衰小（＜５０Ｖ／ｓ），残余电位低（３０Ｖ／ｓ）．由真空蒸镀成膜（ＣＧＬ）所研制的Ｐ／Ｒ的光电导性能更为优异．

The photoelectroconductivity of a double-layered photoreceptor(P/R)was studiedin the paper,in which the chloroinduim phthalocyanine(ClInPc)was a carrier gen-eration layer and polyvinyl carbazole(PVK)incoporating tetraphenyl benzidine(TPD) as,a carrier transportation layer. Results of the P/R consisting of ClInPc/PMMA(30%)matched with TPD/PVK(1∶1)shows excellent protoelectronic properties:acceptance po-tential,V_(max)(800V);residual potential,V_(min)(30V/s);dark decay,RD(<50V/s);light dis-charge,△V_t(1s)>70%;half decay,Simultaneously the photoelectronicproperties of the P/R device in which the CGL is made by means of evaporating at vacuumare better than that of other method.