摘要
用从头算研究了d空穴位置不同对Ni—CO成键机制的影响。结果表明,Ni—CO键中σ/π接受作用的相对强弱,取决于Ni—CO簇所处的能态。σ空间电子云较π空间电子云弥散,因而Ni—CO簇的稳定性与σ空间电子云的排斥密切相关。随着Ni4pσ轨道上电子占据数的增加,Ni—CO稳定性减弱。比较了分子簇Ni—CO与NiCO分子及CO/Ni化学吸附体系之间的性质。
Ab initio methods are employed to study the influence of the d-hole position upon the Ni-CO bonding mechanism. The calculation results demonstrate that the relative importance of σ-donation and π-backdonation varies with the electronic states of Ni-CO. The electron cloud in σ subspace is more diffuse than that in π subspace,thus the stability of Ni-CO is closely related to the electronic repulsion in σ subspace. With the increase of the Ni 4pσ occupation, the stability of Ni-CO decreases. Combinebd with the previous results,a comparison between Ni-CO molecular cluster and NiCO molecule, as well as CO/Ni chemisorption system, is given.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第12期1821-1824,共4页
Chemical Journal of Chinese Universities
基金
国家自然科学基金
关键词
镍-一氧化碳
分子簇
从头算
吸附
Ni-CO molecular cluster,Ab initio, d-Hole position, Chemisorption