Ba铁氧体溅射薄膜的研究

Study of Sputtered Ba-Ferrite Films

研究了射频溅射制备Ｂａ铁氧体薄膜的成膜条件对晶化、晶体结构及磁性能的影响。我们的工作表明，为了使射频溅射Ｂａ铁氧体薄膜形成磁铅石结构的晶体，基板温度需高于６００℃，更高的基板温度可获得好的Ｃ轴垂直取向。非晶膜经热处理晶化所需温度要比直接溅射温度高得多。过大、过小的氧气分压不利于垂直膜的生成。使用挡板对最小溅射角限制以后，可在小的基板－靶间距情况下定得Ｃ轴垂直取向的薄膜。

The influences ofsputtering conditions on the propeities of crystallizing,structureand the magnetic properties of sputtered Ba-ferritefilms were studied.In order to get a film with magnetoplumbite structure,substrate temperyture(T_s)over 600℃ is peeded.When T,higher than650℃,a C-axis perpendiculsr orientation could beobtained.The crystallizing tcmperature of amorphous fiims is much higher than that needed by direct sputteling. Moderate oxygen pressure is suitable for getting a perpendicular film,With a shutterto control the minimum sputtering angle,C-axisperpendiculax orientation could be obtained whenthe distance betwcen subStrate and target is very short.