摘要
通过SEM、TEM研究了PECVD方法制备的SnO_2薄膜的显微结构,讨论了沉积速率与颗粒大小的关系;在Si、陶瓷和KBr3种不同衬底上沉积的SnO_2薄膜的差异以及退火对SnO_2膜结晶状态的影响。结果表明,PECVD方法制备的SnO_2薄膜是非晶态,具有柱状结构。退火使非晶SnO_2膜向着多晶方向转化,演化过程为:非晶大颗粒→超微粒多晶→晶粒长大。
The microstructure of SnO_2 films prepared by plasma enhanced Chemical vapour deposition(PECVD)was studied by SEM and TEM.IT isfound that grain size of the SnO_2 films is obviously influenced by the rate of deposition,the annealing processes and substrates,on which thefilms are grown.The results show that the unan-nealed SnO_2 films,predpared by PECVD,are amorphous with a columnar strLicture and the thermalannealing samples are polycrystalline,During thetransform process from the arnorphous state to thepolycrystal grain size of the films decreses clearly,when the temperature high enough and the polycrystal grain size begins to increase.
出处
《功能材料》
EI
CAS
CSCD
1994年第2期144-149,共6页
Journal of Functional Materials