具有高量子效率、低暗电流、高可靠性的平面InGaAs　PIN光电二极管

Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

本文详细讨论了量子效率和响应时间两个重要参数与器件结构参数的关系，为器件设计提供了依据，并提出了器件的设计方案。根据设计方案研制出的平面ＩｎＧａＡｓＰＩＮ光电二极管，量子效率高达９０％以上，暗电流为１００ｐＡ。在－１０Ｖ偏置下，１８０°Ｃ时ＭＴＴＦ大于３０００ｈ，２３０°Ｃ时ＭＴＴＦ为５００ｈ。

The dependence of quantum efficiency and response time on the parameters of device structure were disussed in the paper in detail,which provided the basis for the device design scheme was also derived. According to the design,and the scheme, the pianar photodiodes were realized with quantum efliciency over 90% and dark current at 100pA level (- 5 V ). MTTF (mean time to failure) of the devices is longer than 3 000 h (180°C ) and 500 h(230°C ) at - 10 V bias