多层梯度层InGaAs（P）／InP　SAGM雪崩光电二极管

InGaAs(P)/InP SAGM Avalanche Photodiode with Multi-gradient Layers

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。

In this paper,we report a multi-gradient layers (three or more) InGaAs (P)/InP avalanche photodiode with the middle bandgap transition between seperated absorp tion and multiplication regions, which has beed successfully developed by using liquid phase epitaxy growth and traditional photoetching fabrication technique (referred to as InGaAs (P)/InP SAGM). The obtained test results are: breakdown voltage VB=40～90V,dark cur rent Idmin(0.9 VB)<10nA, responsivity (1.3μm)Re=0.6～0.8A/W, multiplication factor M ≥20(Mmax>40),excess noise factor F=5, and wide band frequency response.