摘要
本文利用Ａｕｇｅｒ分析技术和Ｃ－Ｖ测量方法，详细地研究了ＰＥＣＶＤＳｉ３Ｎ４／ＩｎＰ界面特性，Ａｕｇｅｒ能谱分析表明热处理使界面面发生互扩散，同时ＩｎＰ的热分解导致Ｐ元素穿过Ｓｉ３Ｎ４薄膜到达表面。Ｃ－Ｖ测量表明Ａｇ／Ｓｉ３Ｎ４／ＩｎＰＭＩＳ结构可以实现载流子的堆积、耗尽和反型。
The properties of PECVD Si3 N4/InPinterface were studied usingAugerElectron Spectrum and C-Vmeasurements. As shows that inter-diffusion at Si3 N4/InPinterface is caused after heat-treatment and element is found on the surface offilm.C-Vcurve of Ag/Si3N4 /InP MIS structure shows accumulation. depletion and in-versionregions.
出处
《光子学报》
EI
CAS
CSCD
1994年第2期139-144,共6页
Acta Photonica Sinica
