1．55μmInGaAsP及其相应量子阱结构的LP－MOCVD生长

1.55μm InGaAsp AND InP/InGaAsP QWS GROWN BY LP-MOCVD

本文研究了用低压金属有机化合物汽相外延（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓｐ体材料及ＩｎＧａＡＰ／ＩｎＰ量子阱结构材料的生长条件。三甲基镓（ＴＭ６３）、三甲基铟（ＴＭｈ）和纯的砷烷（Ａ８Ｈ３）、磷烷（ＰＨ３）分别用作Ⅲ族和Ⅴ族源，在非故意掺杂情况下，ＩｎＧａＡｓＰ材料的载流子浓度为３．６×１０１５ｃｍ－３；在液氦温度和室温下，与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ光致发光半峰宽分别为１９．２ｍｅＶ和６３ｍｅＶ；对外延层的组分及厚度均匀性分别进行了转靶Ｘ光衍射仪，低温光致发光和扫描电子显微镜分析，对不同阱宽的量子阱结构材料测出了由于量子尺寸效应导致光致发光波长随阱宽增加而红移现象。

InGaAsP bulk material and InP/InGaAsP quantum wells structure(QWS)material are grown by low-pressure metalorganic chemical vapor deposition on(100)InP substrates.The sources are trimethylgallium(TMGa),trimethy lindium(TMIn),10 0%AsP3,and 100%PH3.Thetypical doping carrier concentration(without inten-tional)is 3.6 ×1015 cm-3. The low(77K)and room temperature(300K)photoluminescence(PL)full widthes at half maxnnum(FWHM)are 192 and 63 meV,respectively. The homogenieties of composition and thickness of epitaxial layers are measured by rota- ting anode X-ray diffractometer,low-temperature PL and scan electron microscope. The wavelength red shift phenominon resulted from“quantum size effect”is observed for different well width materials.