LP－MOCVD生长InGaAs／InP应变量子阱的研究

STRAINED MULTI-QUANTUM WELL OF InGaAs/InP BY LP-MOCVD

本文研究了ＬＰ－ＭＯＣＶＤ对不同ｘ值的Ｉｎ１－ｘＧａｘＡｓ／ＩｎＰ生长条件，并且生长了压缩应变为０．５％三个不同阱宽的ＩｎＧａＡｓ／ＩｎＰ量子阱结构，利用７７ＫＰＬ光谱分析了能级同阱宽的关系，实现最窄阱宽为４．４ｎｍ，最小全半高峰宽为１７．０ｍｅｖ。

The differential composition and growth rate of InGaAs have been studied by Low Pressure Metalorganic Chemical Vapour Deposition(LP.MOCVD).Compressed strainedlayer 3-Quantum Well(MQW)structure with differental well width has been grown。ThePhoto-Luminescence(PL)in 77K were used to characterize the QW structures.The narrownarrowest well width is 4.6nm and Full Width at Half Maxium(FWHM)is 17.0meV。