砷化镓高速集成电路内部电信号的光探针直接取样

DIRECT SAMPLINGOF ELECTRICAL SIGNAS IN GαAs HIGH-SPEED INTEGRATED CIRCUITS USING OPTICAL PROBE

本文介绍了电光取样技术原理报道了砷化镓高速集成电路内部电信号在片直接电光取样测量系统，它的时间分辨率优于２０ｐｓ，空间分辨率优于３μｍ。通过对砷化镓共面波导的测量证实该系统可以对砷化镓高速集成电路内部电信号进行在片直接电光取样测量。

The principles of electrooptic sampling are reviewed briefly in this paper.Thedirect eletrooptic sampling system for on- wafer measurements of internal electrical signalsin GaAs high-speed integrated circuits with a temporal reso lution of less than 20ps and aspattal resolution of less than 3μm is reported.The probing of GaAs coplanar waveguideshas proved that this system can on-wafer probe internal electr ical signals in GaAs high-speed integrated circuits using direct electrooptic sampling。