摘要
本文研究了氮化物添加对钛酸钡半导瓷电阻-温度曲线之影响.实验表明,除BN外TiN、Si_3N_4、AlN也可以给出较平坦的电阻极大值.在适当的工艺条件下没有氮化物添加同样可以得到类似结果.
The effect of nitride doping on the resistivity -temperature behavior of PTC ceramics is studied in this paper. The experiment has shown that TiN ,Si3N4 ,A1N can also give an even maximum of resistivity besides BN,ancI similar results can as well be obtained without nitride under appropriate process conditions.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
1994年第5期24-27,共4页
Bulletin of the Chinese Ceramic Society
