陶瓷金属化中的化学反应及热力学考虑

Thermodynamic and Reaction Considerations in The Metallization of Ceramic

微电子技术中基板的金属化是为了安装IC芯片和布线,应用较广泛的金属化方法是厚膜技术.厚膜金属化是一个复杂的物理化学过程,厚膜的附着主要通过玻璃结合和反应结合两种方法来实现.要提高厚膜的附着力和电性能等.必须考虑化学反应的热力学,选择合适的导体浆料,主要是玻璃料和活性粘合剂,有效地控制金属化层与陶瓷的界面.玻璃结合与反应结合的结合是提高厚膜质量的有效手段.

Matellization of substrates in microcircuits packaging is required to mount IC chips and to provide interconnection to other circuit components. Awidely used technique of metallization is thick-film technology. There are two primary methods used to provide adhesion of the metal film to the substrates,these are frit bonding and reactive bonding. The use of considerations of reaction and thermodynamic which occur in thick-film metallizations may lead to the successful development of high adhesion and good electric properties of metal film, may lead to exploitation of adhesion promotors. Combining glass frit and reactive bonding is the current answer for the best compromise between adhesion and bondability of thick film conductors.