1.56MeV Sb^＋注入单晶硅的反常退火行为

Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon

剂量为２×１０（１３）－５×１０（１５）ｃｍ（－２）的１．５６ＭｅＶＳｂ＋注入Ｓｉ（１００）后，向石英炉中通入流动纯Ａｒ气进行热退火（退火温度为５００一１０５０℃，时间为３０ｍｉｎ）。采用３ＭｅＶＨｅ（２＋）卢瑟福背散射／沟道技术和透射电镜技术测量样品的注人损伤以及退火特性，结合计算机模拟数据，结果表明：缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。

The damage and annealing behavior of 1.56 MeV Sb+ ion implanted Si(100) have been studied. The dose range of implantation was 2 × 1013-5 × 1015 Sb+/cm2. The samples were annealed for 30 minutes in flowing Ar gas at temperatures ranging from 500 to 1050 ℃ in a conventional furnace tube. The implantation-induced damage and annealing quality of the samples were measured with 3 MeV He+ RBS/channeling and TEM techniques. In addition, a computer simulation of ion implantation damage has been performed with TRIM program. It is concluded that the category of defects is related to ion dose and annealing temperature of samples.