摘要
采用４８０ｋｅＶＰ＋离子注入单晶硅，注入剂量为１×１０１６ｃｍ－２。采用ＲＢＳ、ＴＥＭ技术测试样品，发现样品经６００℃退火后，距样品表面约２４０ｎｍ处有一条低密度缺陷带。研究表明，这一现象与Ｐ＋的剂量及退火温度有关。
The damage and annealing behavior of single-crystal Si(100) samples implanted with 480 keV P+ ions with a dose of 1×1016cm-2 have been studied.Samples were analysed with RBS/channeling and cross-sectional TEM techniques.The result indicates that there is a low density defects band at the depth of 240 nm after annealing at 600℃ for 30min.This phenomenon is related to P+ dose and annealing temperature.
出处
《核技术》
CAS
CSCD
北大核心
1994年第2期65-68,共4页
Nuclear Techniques
基金
中国科学院上海冶金研究所离子束开放实验室资助
