中子辐照注量对单晶硅中缺陷退火行为的影响

Influence of neuteron radiation dose on annealing behaviour of defects in c-Si

用正电子湮没寿命和多普勒加宽测量研究了不同注量中子辐照的氩气氛区熔单晶硅中缺陷的退火行为，发现不同中子注量辐照时，辐照致空位型缺陷的退火行为十分类似，并均在５５０℃时退火消除；但辐照致双空位浓度、二次双空位和四空位型缺陷的产生、浓度和消除温度很不相同。简单陷阱模型不适用于５００℃以下退火的高中子注量辐照的单晶硅，但能部分适用于中等注量辐照的单晶硅。

The annealing behaviour of defects in FZ silicon grown in argon atmosphere and irradiated with neutrons has been studied by positron annihilation lifetime and Doppler broadening measurements.For FZ silicon irradiated with different neutrondoses,the radiation-induced monovacancy-type defect has very similar annealing behaviour and can be annealed out at 550℃,but the concentration of radiationinduced divacancy and the production,concentration and annealing-out temperature of secondary divacancy-and quadrivacancy-type defects are very different.The simple trapping model seems not suitable for FZ silicon irradiated with high neutron dose and annealed at the temperature lower than 500℃,but is suitable partially for that irradiated with middle neutron dose.