三段非对称复合腔InGaAsP／InP半导体激光器的选模特性

Mode-selection characteristic of the asymmetrical three-section composite-cavityInGaAsp/InP semiconductor laser

本文分析了三段非对称复合腔ＩｎＧａＡｓＰ／ＩｎＰ半导体激光器的选模特性，给出了有效反射率随波长周期性变化的计算机模拟结果和采用质子轰击新工艺制作的三段非对称复合腔激光器的实验结果．结果表明，选择合适的腔长Ｌ１、Ｌ３和有效折射率ｎ２能获得大的边模抑制比。

Abstract Simulation and experimental results of the asymmetrical three-section composite-cavity InGaAsP/Inp semiconductior laser are reported. The mode-selectionproperty of this laser is explained in terms of the wavelength-dependent effectivereflectance. A better mode-selection property with a larger sub -mode suppressionratio can be obtained to select L1, L3 and n2 appropriately.