摘要
考虑了InGaAsP半导体激光器的俄歇效应后,对描述稳态运行的半导体激光器的行波速率方程组进行了修正,求得了隐函形式的解析解,并以此对激光器的一些重要持性进行了讨论。
Taking into account the Auger effect, travelling wave rate equations applicable to InGaAsP semiconductor lasers were modified. The implicit analytical solutions have been deduced for the revised equations. Based on the expressions obtained, certain important characteristics of the diode lasers were discussed.
出处
《黑龙江商学院学报》
CAS
1994年第3期34-38,共5页
Journal of Harbin Commercial University(Natural Sciences Edition)
关键词
半导体激光器
行波速率方程
平均场近似
semiconductor laser,travelling wave rate equantions,rate equations