摘要
提出并生长了晶格匹配的ＨｇＳｅ／ＺｎＴｅ超晶格系统，红外透射测试表明其禁带宽度落在红外波段的能量范围，将Ｚｈｕ的关于ＺｎＳｅＭＢＥ生长模型加以推广，讨论了生长温度和束流条件对ＨｇＳｅＭＢＥ生长的影响。
Lattice-matched HgSe/ZnTe superlattice systems were proposed and grown for the first time. Infrared transmission measurement indicated that their band gaps fall in the infrared spectrum range. By extending Zhu's MBE growth model of ZnSe,the influence of growth temperature and flax condition on HgSe-MBE was discussed,and MBE-grown HgSe epilayers were first obtained at 160～180℃.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第1期53-58,共6页
Journal of Infrared and Millimeter Waves
关键词
分子束外延
红外材料
超晶格半导体
molecular
beam epitaxy
superlattice
infrared materials
