摘要
利用导纳谱研究了ＧａＡｓ／ＧａＡｌＡｓ单量子阱光调制器的电学行为，观察到了量子阱中电子或空穴子能带的“场致去局域化”
The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第1期65-68,共4页
Journal of Infrared and Millimeter Waves
关键词
量子阱
导纳谱
子能带
光调制器
quantum well, admittance spectroscopy, GaAs/GaAlAs, subband
