摘要
Si/Ge超晶格外延生长技术的发展和多孔硅发光现象的发现引起了对硅基低维结构材料的关注.本文简单综述了近年来在Si/Ge超晶格电子态和光学性质、调制掺杂Si/GexSi1-x异质结构输运性质以及多孔硅发光机理等方面的研究进展.
The development of the growth technology of Si/Ge superlattices and the discovery of luminesceilce of porous silicon give rise to intense interest of investiration on .the Si-based low-dimensional structuxe materials. This paper reviews recent progress in this field, including:electronic states and optical properties of Si/Ge superlattices, transport properties of modulatinn doped Si/Ge.Si1-x. heterojunctions, and luminescence mechanism of porous silicon, etc.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第1期1-8,共8页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金
关键词
低维结构
多孔硅
异质结
硅
发光
low-dimensional structure, modulation doped heterojunction, porous silicon, Si/Ge superlattices.