摘要
用深能级瞬态谱（ＤＬＴＳ）系统地研究了ＧａＡｓ（５０Ａ）／ＧａＡｌＡｓ（５０Ａ）超晶格中的电子辐照缺陷，证实其亚稳态特性的存在，对其恢复温度、转变条件进行了研究，指出在体材料中不能观察到电子辐照缺陷亚稳态的原因．
Deep Level Transient Spectroscopy (DLTS) was used to study the irradiation-induced defects in GaAs (50A)/GaAlAs (50A) superlattice. The existence of metastability of such defects was demonstrated, and their transition temperature was studied. The reason why these characteristics can not be observed in the bulk materials is pointed out.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第3期161-164,共4页
Journal of Infrared and Millimeter Waves
关键词
电子辐照缺陷
超晶格
亚稳态
electron irradiation-induced defects, superlattices, metastability, DLTS.
