摘要
从理论上完成对ＭＯＣＶＤ工艺生长的ＨｇＣｄＴｅ／ＣｄＴｅ／ＧａＡｓ材料的透过率、吸收边和相干行为的计算．结果表明光的干涉条纹与外延层ＨｇＣｄＴｅ和缓冲层ＣｄＴｅ的总厚度相关，其透过率不能直接反映材料的内在质量．计算结果还表明，外延材料组份的均匀性对红外光谱的吸收边有很大的影响．运用理论计算对实验中测得的光谱曲线进行了分析，发现ＭＯＣＶＤ工艺存在着一种部分过饱和态的生长机制，并发现负禁带ＨｇＴｅ薄膜也具有一定的透光特性．
The transmittance, absorption edge and interference behaviors were calculated theoretically for the Hg1-xCdxTe/CdTe/GaAs materials grown by MOCVD. The calculation results show that the transmittance of Hg1-xCdxTe film can not reveal the material quajity as that of bulk material. The relationship between the interference wave and Hg1-xCdxTe film thickness is discussed. It also can be found from the calculation of the absorption edge that the composition uniformity of the film has great influence on the absorption edge of the infrared spectra. By analyzing the spectrum properties measured in the experiments, a kind of partial saturated growth mechanism is discovered for MOCVD. Besides, it is found that the HgTe film has also a certain transmission to infrared radiation.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第3期191-198,共8页
Journal of Infrared and Millimeter Waves
基金
高技术基金
