Hg_(1-x)Cd_xTe深缺陷能级研究

STUDIES OF DEEP DEFECT LEVELS IN Hg_(1-x)Cd_xTe

利用深能级瞬态谱(DLTS)研究了Hg_(1-x)Cd_xTe(x=0.4)p^+n光伏二极管中的缺陷能级.通过改变注入脉冲条件,获得2个电子陷阱和2个空穴陷阱,电子陷阱的能级位置分别为E(0.06)和E(0.15),空穴陷阱的能级位置分别为H(0.075)和H(0.29).这些深能级的浓度约为浅能级浓度的百分之几.通过改变注入脉冲的宽度,测量了这些能级的多子俘获截面,根据这些深能级的特征参数,估算了器件的少子寿命和零偏压的动态电阻与面积的乘积,并讨论了一些缺陷能级的本质.

The defect levels in Hg1-xCdxTe p+n junction photodiodes were studied by using Deep Levels Transient Spectroscopy (DLTS). Two electron traps, E(0.06), and E (0.15) and two hole traps, H (0.075) and H (0.29), were obtained, respectively. Their concentrations are only a few percent of shallow levels. According to these characteristic parameters, the minority lifetime of the devices and the product of area times the dynamic resistance at zero bias are estimated. The nature of some defect levels is suggested, too.