摘要
本文采用光弹力学中的Ｓｅｎａｒｍｏｎｔ补偿法，用红外光弹仪测量并分析了单面扩散、双面扩散工艺在硅衬底中引入应力的分布规律及产生机理。研究了双源补偿扩散法掺杂技术消除应力的可行性及工艺条件。
With the help of infrared. laser photodriticity system, the distributionsof diffusion stress in one-side and two-side diffused silicon samples are measured by Senarmont's compensation method of photoeboticity. The mechanismresponsible for diffusion stress is analyed. It is studied how to decline andfinally eliminate the diffusion stress, based on .the process of double-inpuritycompensation diffusion method.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1994年第1期11-16,共6页
Journal of South China University of Technology(Natural Science Edition)
关键词
硅
应力
扩散
光弹性
s: silicon, stresses, diffusion, photoelasticity
