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Al-Si(1%)互连线电迁移失效研究 被引量:1

Research on Failure of Electromigration of Al-Si (1%) Interconnections
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摘要 本文介绍了用测试结构做的Al-Si(1%)互连线的电迁移加速寿命试验。加速温度为175℃,电流密度为1-3×106A/cm2。观察到线条的不同几何因素(长、宽、厚),不同的溅射工艺和钝化层,以及氧化层台阶都对电迁移寿命有显著的影响。对实验结果作了初步的分析和讨论。 The acceleration life test of electromigration of Al-Si (1%) interconnections is presented.The acceleration temperature is 175℃, the current density is (1-3) × 106A / cm2. The different geometrical factors (length. width. thickness) of metal strips, different sputtering techniques,passivation layers and the oxide steps are all observed to have evident effects on the electromigration life. The experimental results are analysed and discussed.
出处 《华东师范大学学报(自然科学版)》 CAS CSCD 1994年第1期35-40,共6页 Journal of East China Normal University(Natural Science)
基金 国家自然科学基金
关键词 电迁移 金属化 集成电路 互连 electromigration metallization
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