多晶光敏材料──CdS∶Cu·In的制备和性能研究

Study on preparation and properties of polycrystalline photosensitive material──CdS:Cu·In

在混合助熔剂ＮａＣｌ－ＣｄＣｌ２（ＣｄＣｌ２：ＮａＣｌ＝１：７）：基质ＣｄＳ＝１：３．６和用离子交换树脂纯化热处理物中可溶性离子的条件下，制备出数均位径＝３．１３μｍ，最大和最小晶粒的直径比＝４．９的多晶光敏硫化镉──ＣｄＳ：Ｃｕ·Ｉｎ。用它制造的ＮＰ静电照相感光鼓的光电性能优良且抗湿性强。

In this study polycrystalline photosensitive CdS:Cu·In with numerical average diameter of about 3. 13μm and a diameter ratio of about 4.9 for the largest to the smallest grains was prepared under the conditions of flux of NaCl-CdCl2 (NaCl:CdCl2 = 7:1 byweight):matri of CdS = 1:3.6 and purifying thesoluble ions in heat-treated material with ion-exchangeresin.The photoelectrical performances of photosensitivedrum for NP electrophotograpby manufactured withthis CdS: Cu·In are good md moisture-resistant.