锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响——Ⅲ.交流阻抗法研究阳极Sb_2O_3膜

Effect of Antimony on the Semiconducting Properties of the Anodic Plumbous Oxide Film Formed in Sulfuric Acid Solution Ⅲ. Studies on the Anodic Sb_2O_3 Film with A. C. Impedance

应用交流阻抗方法研究锑在0.05mol.dm^(-3)H_2SO_4十0.5mol.dm^(-3)Na_2SO_4溶液(30℃)中以0.9V(vs.Hg/Hg_2SO_4/0.05mol. dm^(-3)H_2SO_4)生长3h的阳极Sb_2O_3膜的半导体性质.从Mott-Schottky曲线可知,此膜为n型半导体,平带电位为-0.34V(vs.Hg/Hg_2SO_4/0.05mol.dm^(-3)H_2SO_4),施主密度为4.0×10^(19)cm^(-3).讨论了锑增加铅锑合金阳极Pb(Ⅱ)氧化物膜施主密度的原因.

The semiconducting properties of the anodic film formed on antimony in 0.05 mol·dm-3H2SO4+0.5mol·dm-3Na2SO4 solution (30℃) at 0.9V (vs. Hg/ Hg2SO4/ 0.05mol·dm-3H2SO4) for 3h were investigated using the a. c. impedance method. From the Mott-Schottky plot, the film is demonstrated to be an n-type semiconductor. The flat-band potential of the film is -0.34V (vs. Hg / Hg2SO4 / 0.05mol·dm-3H2SO4), while the donor density is 4.0×10l9cm-3. The effect of the antimony on the donor density of the anodic plumbous oxide film is discussed.