摘要
本文介绍了等离子体辅助镀膜技术以及相应的高真空等离子体源。这种新型等离子体源属于空心冷阴极结构,工作气压在1×10 ̄(-3)pa~10 ̄(-1)pa,它的最大优点在于能够直接电离氧化性气体而不烧毁阴极。采用探针法测定了氩等离子体中辅助离子的能量范围在50~80eV之间,并在氩气、氧气的等离子体中分别沉积了单层ZnS薄膜和SiO_2薄膜。实验结果表明,生成的薄膜具有良好的光学和机械性能。
The principles of plasma ion-assisted deposition(IAD)and a new high vacuum plasma sotirce are introduced.With a hollow cold cathode discharge, the plas-ma sotirce can be operated in ambient pressure from 1×10 ̄(-3)pa to 1×10 ̄(-1)pa, the reac-tive gas and the nonreactive gas can be used as working gas.The energy of Ar ̄+in ar-gon plasma,h1eatstired with a Longmuir probe,i;50~80eV, depending on pressure and discharge current density.It has been experimentally confirmed that both the opti-cal properties and mechanical properties of single-layer films of ZnS and SiO_2 prepared in argon plasma and oxygen plasma have been improved considerably as compared to those films obtained with traditional vapor deposition.
出处
《激光技术》
EI
CAS
CSCD
1994年第1期50-54,共5页
Laser Technology
关键词
等离子体
辅助镀膜
光学薄膜
films plasma deposition methode ion-assisted deposition