等离子体辅助镀膜

Ion-assisted deposition using a new plasma source

本文介绍了等离子体辅助镀膜技术以及相应的高真空等离子体源。这种新型等离子体源属于空心冷阴极结构，工作气压在１×１０￣（－３）ｐａ～１０￣（－１）ｐａ，它的最大优点在于能够直接电离氧化性气体而不烧毁阴极。采用探针法测定了氩等离子体中辅助离子的能量范围在５０～８０ｅＶ之间，并在氩气、氧气的等离子体中分别沉积了单层ＺｎＳ薄膜和ＳｉＯ＿２薄膜。实验结果表明，生成的薄膜具有良好的光学和机械性能。

The principles of plasma ion-assisted deposition(IAD)and a new high vacuum plasma sotirce are introduced.With a hollow cold cathode discharge, the plas-ma sotirce can be operated in ambient pressure from 1×10￣(-3)pa to 1×10￣(-1)pa, the reac-tive gas and the nonreactive gas can be used as working gas.The energy of Ar￣+in ar-gon plasma,h1eatstired with a Longmuir probe,i;50～80eV, depending on pressure and discharge current density.It has been experimentally confirmed that both the opti-cal properties and mechanical properties of single-layer films of ZnS and SiO_2 prepared in argon plasma and oxygen plasma have been improved considerably as compared to those films obtained with traditional vapor deposition.