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准分子激光剥离金刚石薄膜 被引量:1

Ablation of Diamond Thin Film by Excimer Laser
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摘要 准分子激光剥离金刚石薄膜赵方海,王庆亚,任临福,郑伟,马力,张玉书(集成光电子学国家重点联合实验室吉林大学实验区,吉林大学电子工程系,长春130023)关键词准分子激光器,光解剥离,阈值金刚石材料具有材质硬、热导率高等优点 ̄[1],是良好的机械加工刀... The present paper reports the research results of the ablative photodecompositionagainst the diamond thin film by excimer lasqer. Meanwhile, the result is also analyzed anddiscussed. The light energy density threshold was determined.
出处 《吉林大学自然科学学报》 CAS CSCD 1994年第2期79-80,共2页 Acta Scientiarum Naturalium Universitatis Jilinensis
关键词 准分子激光器 光解剥离 金刚石薄膜 excimer laser,ablative photodecomposition, threshold
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  • 1张克从 张乐.晶体生长科学与技术[M].北京:科学出版社,2003..
  • 2Yong Seok Choi, Seong Jin Kim. Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique[J]. Solid-State Electronics, 2006, 50(9): 1522-1528.
  • 3Y P Hsu, S J Chang, Y K Su, et al.. ICP etching of sapphire substrates[J]. Optical Materials, 2005, 27: 1171-1174.
  • 4Horisawa H, Emura H, Yasunaga N. Surface machining characteristics of sapphire with fifth harmonic YAG laser pulses[J]. Vacuum, 2004, 73(s 3-4): 661-664.
  • 5Stoian R, Rosenfled A, Ashkenasi D, et al..Surface charging and impulsive ion ejection during ultrashort pulsed laser ablation[J]. Physics Review Letters, 2002, 88(9): 097603.
  • 6Tam A, Brand J, Cheng D, et al.. Picosecond laser sputtering of sapphire at 266 nm[J]. Applied Physics Letters, 1989, 55(20): 2045-2047.
  • 7Zhang Bingyuan, Li Gang, Chen Meng. Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror[J]. Optics Letters, 2003, 28(19): 1829-1831.
  • 8黄加福,魏昕,谢小柱,何广涛.影响激光抛光效果的因素分析[J].激光与光电子学进展,2008,45(12):20-24. 被引量:12
  • 9常亮,陈檬,李港,麻云凤,樊仲维,牛岗,余锦,刘洋,张雪.激光二极管侧面抽运千赫兹皮秒激光再生放大器的热特性[J].中国激光,2010,37(3):873-876. 被引量:4
  • 10季凌飞,凌晨,李秋瑞,吴燕,闫胤洲,鲍勇,蒋毅坚.皮秒激光工程应用研究现状与发展分析[J].机械工程学报,2014,50(5):115-126. 被引量:28

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