耐反应离子刻蚀的紫外激光光致抗蚀剂的研究

Investigation on UV laser-photoresist for reactive ion etching

以芳香族双迭氮基化合物为交联剂，苯氧基二苯甲酮为光敏剂，聚甲基丙烯酸甲酯（ＰＭＭＡ）为基质树脂，合成了负型激光光致抗蚀剂。该体系能够在氮分子激光辐照下发生灵敏的光致交联反应，所生成的致密薄膜可以耐四氟化碳等离子体的反应离子刻蚀（ＲＩＥ）。用付里叶变换红外光谱法与紫外光谱法研究了激光光致交联反应以及反应离子刻蚀的动力学过程。讨论了影响反应速率以及刻蚀选择比的诸因素。

A negative laser-photoresist is synthesized using aryl diazide as crosslinking agent,phenoxy benzophenone as photoinitiator,and polymethyl methacrylate(PMMA) as basic resin.The crosslinking reaction of the said system can be sensitively induced by N_2 laser.The compact film produced by the said reaction can resist the reactive-ion-etching(RIE)of the CF_1 Plasma.The kinetics of laser-induced reaction and RIE process is investigated with FTIR and UV spec-troscopy.The factors having influence on the reaction rate and the etching selectivity are dis-cussed.