摘要
本文探讨了ＬＰ－ＭＯＶＰＥ法在ＧａＡｓ和ＩｎＰ衬底上生长２１个周期的ＩｎＧａＡｓ／ＧａＡｓ和２０个周期的ＩｎＧａＡｓ／ＩｎＰ两种应变超晶格的条件，并用Ｘ射线衍射分析了这两种应变超晶格，分析观察到三级卫星峰和六级卫星峰。
The present paper cover the conditions for the growth of InGaAs/GaAs andInGaAs/InP strained-layer superlattices by low pressure metalorganic vapor pliase epitaxy.Double and single crystal X-ray diffractions were measured.X-ray double crystal diffractionshwed three-and six-grades satelitte peaks observed separately for the two superlattices.
出处
《吉林大学自然科学学报》
CAS
CSCD
1994年第1期72-75,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
集成光电子学国家重点联合实验室开放课题
