Ⅱ－Ⅵ族化合物半导体薄膜材料的热壁外延生长

Growth f Ⅱ-Ⅳ Group of Compound-Semiconductors Thin Films by Hot Wall Epitaxy

本文利用改进了的热壁外延装置，在ＧａＡｓ衬底上外延生长了ＧｄＴｅ，ＺｎＳｅ，ＺｎＳＳｅ，ＺｎＳ等半导体单晶薄膜，ＺｎＳｅ／ＺｎＳ，ＺｎＳＳｅ／ＺｎＳｅ异质结构和ＺｎＳ／ＺｎＳｅ，ＺｎＳＳｅ／ＺｎＳｅ超薄层、多层结构。ＳＥＭ，ＥＭＰＡ，ＸＲＤ及ＰＬ等分析测试结果表明，所生长的半导体薄膜材料具有良好的结晶学性质和光学性质。

A new type of HWE apparatus-modified HWE apparatus was developed.Us- ing this apparatus,the CdTe,ZnSe, ZnSSe and ZnS single crystal films,ZnSSe/ZnSe andZnS/ZnSe herostructures, ZnSSe/ZnSe…and ZnS/ZnSe…multilayers were prepared onGaAs(100) substrate. SEM,EMPA,XRD and PL analvsis indicate that these thin films ex-hibit good crystalline and optical properties.