InAsPSb／InAs四元系异质结液相外延

Liquid Phase Epitaxial Growth of InAsPsb/InAs Heterostructure

利用液相外延技术，考察了与ＩｎＡｓ衬底晶格匹配的ＩｎＡｓＰＳｂ四元系化合物生长条件对外延层晶体质量的影响．

Quaternary InAsPSb epitaxial layers were directly grown on InAs substrate with-out buffer layer using both the supercooling and stepcooling liquid phase epitaxy(LPE)tech-niques. Some properties of InAsPSb/InAs were investigated.V-I characteristics of p-n junc-tion consisting of p-InAsPSb and n-InAs substrate were given at 300 K and 77 K。The diodes were driven by current pulses 10 μs duration and 500 Hz～5kHz pulses'srepetition,The laser emission with wavelength 3. 09 μm was observed from single heterojunctionmade of p-InAs_(0.82)P_(0.12)Sb_(0.06)and n-InAs substrate at 12 K。