CH_4离子束增强沉积对TiC薄膜显微硬度的影响机制

INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS

研究了双离子束沉积ＴｉＣ薄膜的形成．离子束反应溅射膜的显微硬度比ＣＨ_４高子束增强沉积膜的显微硬度高．ＸＰＳ，ＴＥＭ和ＡＥＳ分析表明后者硬度低的一个重要原因是ＣＨ_４离子束轰击引入过量的自由碳原子．

Synthesis of TiC films was investigated by dual ion beam deposition. Higher Knoop hardness number on the TiC films prepared by CH_4 ion beam enhanced deposition as comparison with that without CH_4 was obtained. The important reason, which showed by XPS, TEM and AES analyses, may be due to the excess C introduced to the TiC films during ion beam bombardment.