a─Ge：H薄膜电学性质的研究

Investigation on Electrical Properties of a─Ge :H Films

用光吸收谱和电导率测量较全面地研究了射频反应溅射淀积的ａ－Ｇｅ：Ｈ薄膜的电学性质：研究了射频功率和退火温度对ａ－Ｇｅ：Ｈ膜电学性质的影响．所得结果为ａ－Ｇｅ：Ｈ的应用提供了一定的依据。

Electrical properties in reactive sputtered a─Ge :H films are studied by optical absorption spectrum and conductivity measurement Effects of R. F. power and annealing temperature on electrical properties have been discussed. The obtained results are useful for the application of a-Ge: H films.