摘要
用原子吸收光谱和X射线荧光光谱,测得Ni在Si中的分布为内部浓度低,表面浓度高的U形分布。扫描电子显微镜观察到了Ni在Si表面的沉积和由此产生的晶格缺陷。表面沉积物是Si—Ni合金,其原子比为Si:Ni—2:1。
Distribution and precipitation of Ni in Si were studied by atomic absorption spectrometry (AAS), X-Ray fluorescence analysis (XRF) and scaning electron microscope (SEM) . The concentration of Ni is much higher at Si surface than in the interior. Distribution of Ni in Si is U-shaped. Precipitation of Ni and lattice defects were observed. The surface precipitation mass is Si-Nialloy that atomic ratio is Si : Ni=2 : 1.
出处
《四川大学学报(自然科学版)》
CAS
CSCD
1989年第3期305-308,共4页
Journal of Sichuan University(Natural Science Edition)
关键词
镍
硅
杂质分布
沉积
光谱
distribution, precipitation, silicon, atomic absorption spectrometry.