砷化镓探测器的镉上中子辐照改性

MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAION

介绍反应堆镉上中子辐照改性的掺铬砷化镓（ＧａＡｓ：Ｃｒ）和本征砷化镓（ＧａＡｓ）光电导探测器，研究了探测器的响应时间、粒子灵敏度及输出电流随镉上中子辐照改性注量和施加偏压的变化关系。

This paper reported the modification of Gr-doped GaAs and undoped Ga As photoconductor by neutron(above Cadmium)-treated.The exporimental results showed that the relations of the response time,the sensitivity to particle,and the output current of photoconductors with neutron-treated flux and bias voltages of he detectors.