半磁性半导体Cd_（1－x）Mn_xTe深能级的研究

Study on Deep Energy Level in Semimagnetic Semiconductor Cd_(1-x)Mn_xTe

通过测量半磁性半导体Ｃｄ＿（１－ｘ）Ｍｎ＿ｘＴｅ晶体在７７～３００Ｋ温度范围的电导率变化，得到了晶体的一个受主深能级约为０．１８ｅｖ左右，并通过分析以及退火后的电导率的测量，认为它可能是由［Ｖ＿（Ｃｄ）￣（２－）Ｄ￣＋］引起的，同时通过ＶａｎｄｅｒＰａｕｌ法，对Ｃｄ＿（１－ｘ）Ｍｎ＿ｘＴｅ晶体进行了室温下的霍耳效应测量，得到了它的一些电学参数。

In this paper,an acceptor` s deep energy level,about 0.18eV above valence band is obtained by measuring the specific conductance of semimagnetic semiconductor Cd_(1-x)Mn_xTe in the temperature range between 77K and 300K. The deep energy level is assigned to a combination of[V_(Cd)￣(2-)D￣+]by theory analysis and measurement of electrical conductivity after annealing.Addtional ,some parameters of Cd_(1-x)Mn_xTe crystal are obtained by measuring Hall effect at room temperature using Van der Paul method.